Magnetic memory devices having multiple magnetic layers therein

ABSTRACT

A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

REFERENCE TO PRIORITY APPLICATION

This application is a continuation of and claims priority to U.S. patentapplication No. 16/828,429, filed Mar. 24, 2020, which claims priorityunder 35 U.S.0 § 119 to Korean Patent Application No. 10-2019-0100451,filed Aug. 16, 2019, the disclosures of which are hereby incorporatedherein by reference.

BACKGROUND

The present inventive concepts relate to a magnetic memory device, andmore particularly, to a magnetic memory device that uses the motion ofmagnetic domain walls to influence data storage within the memorydevice.

As electronic devices trend toward higher speed and lower powerconsumption, high-speed read/write operations and low operating voltagesare also required for memory devices incorporated therein. In order tomeet these requirements, magnetic memory devices have been developed ashighly integrated memory devices. Since a magnetic memory device canoperate at high speed and can have nonvolatile characteristics, it hasattracted considerable attention as a next-generation memory technology.For example, new magnetic memory devices have recently been studied anddeveloped to use the motion of magnetic domain walls in magneticmaterials.

SUMMARY

Some example embodiments of the present inventive concepts provide amagnetic memory device whose magnetic domain walls are easy to move.

Some other example embodiments of the present inventive concepts providea magnetic memory device that requires a reduced current for the motionof magnetic domain walls.

According to some example embodiments of the present inventive concepts,a magnetic memory device may including a first magnetic layer, whichextends in a first direction, and a second magnetic layer, which extendson the first magnetic layer. The second magnetic layer extends parallelto the first magnetic layer, and a conductive layer extends between thefirst magnetic layer and the second magnetic layer. The first magneticlayer may include a first region, which has magnetic moments oriented ina first rotational direction along the first direction. The secondmagnetic layer may include a second region, which has magnetic momentsoriented in a second rotational direction along the first direction. Insome embodiments, the second rotational direction may be different fromthe first rotational direction.

According to some example embodiments of the present inventive concepts,a magnetic memory device may include a first magnetic layer, a secondmagnetic layer on the first magnetic layer, and a conductive layerextending between the first magnetic layer and the second magneticlayer. A DMI constant at an interface between the first magnetic layerand the conductive layer and at an interface between the second magneticlayer and the conductive layer may be four times (or more) an exchangecoupling constant between the first magnetic layer and the secondmagnetic layer.

According to some further embodiments of the present inventive concepts,a magnetic memory device may include a first magnetic layer including afirst magnetic domain and a second magnetic domain that are adjacent toeach other in a first direction. The first and second magnetic domainscan have magnetization directions different from each other. A secondmagnetic layer is also provided, which includes a third magnetic domainand a fourth magnetic domain that are on the first magnetic layer. Thethird and fourth magnetic domains respectively facing the first andsecond magnetic domains. A conductive layer is provided, which extendsbetween the first magnetic layer and the second magnetic layer. Thefirst and third magnetic domains may have magnetization directionsopposite to each other, and the second and fourth magnetic domains mayhave magnetization directions opposite to each other. The first magneticlayer may further include a first region between the first and secondmagnetic domains. The first region may have a net magnetization in thefirst direction. The second magnetic layer may further include a secondregion between the third and fourth magnetic domains. The second regionmay have a net magnetization in a direction the same as the firstdirection.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a simplified perspective view showing a magneticmemory device according to some example embodiments of the presentinventive concepts.

FIG. 2 illustrates a cross-sectional view showing a magnetic memorydevice according to some example embodiments of the present inventiveconcepts.

FIG. 3 illustrates an exploded perspective view roughly showing amagnetic memory device according to some example embodiments of thepresent inventive concepts

FIG. 4 illustrates an enlarged cross-sectional view showing section AAof FIG. 2.

FIGS. 5A to 7B illustrate simulation graphs showing a magnetizationdirection based on DMI and Jex of a magnetic track according to someexample embodiments of the present inventive concepts.

FIG. 8 illustrates a cross-sectional view showing a magnetic memorydevice according to some example embodiments of the present inventiveconcepts.

FIGS. 9 to 13 illustrate cross-sectional views showing a magnetic memorydevice according to some example embodiments of the present inventiveconcepts.

DETAILED DESCRIPTION OF EMBODIMENTS

The following will now describe in detail some example embodiments ofthe present inventive concepts with reference to the accompanyingdrawings.

The patent or application file contains at least one drawing executed incolor. Copies of this patent or patent application publication withcolor drawing(s) will be provided by the Office upon request and paymentof the necessary fee.

FIG. 1 illustrates a simplified perspective view showing a magneticmemory device according to some example embodiments of the presentinventive concepts.

Referring to FIG. 1, a magnetic memory device may include a magnetictrack and a read/write element RWE. The magnetic track may includemagnetic domains D arranged along an extending direction of the magnetictrack and magnetic domain walls DW between the magnetic domains D. Themagnetic domain D may be a region where a magnetic moment is aligned ina certain direction, and the magnetic domain wall DW may be a regionwhere a magnetic moment is changed in direction. The magnetic memorydevice may include data storage components that utilize principles ofmagnetic domain wall motion.

The read/write element RWE may be disposed adjacent to the magnetictrack. The read/write element RWE may change a magnetization directionof the magnetic domain D disposed closest thereto. In addition, theread/write element RWE may detect the magnetization direction of themagnetic domain D disposed closest thereto. For example, the read/writeelement RWE may include either a GMR sensor that uses a giantmagnetoresistance effect or a TMR sensor that uses a tunnelmagnetoresistance effect. Differently from what is shown, the read/writeelement RWE may include a read element and a write element that areindependently configured of each other, and the read element and thewrite element may be positioned on the magnetic domains D different fromeach other.

The magnetic track may include a first magnetic layer FL1, a secondmagnetic layer FL2, and a conductive layer CL between the first andsecond magnetic layers FL1 and FL2. The magnetic track may have anelongated wire or track shape. For example, the magnetic track may havea linear shape that extends parallel to a first direction Dl. Thepresent inventive concepts, however, are not limited thereto, and themagnetic track may have a partially curved shape. For example, themagnetic track may include a U-shaped curved portion in some otherembodiments of the invention.

The first and second magnetic layers FL1 and FL2 may be stacked in adirection perpendicular to an extending direction of the magnetic track.Each of the first and second magnetic layers FL1 and FL2 may extend inthe first direction D1. The first and second magnetic layers FL1 and FL2may be stacked in a second direction D2 perpendicular to the firstdirection D1. For example, a top surface of the first magnetic layer FL1and a bottom surface of the second magnetic layer FL2 may face eachother in the second direction D2. Each of the first and second magneticlayers FL1 and FL2 may have a width in a third direction D3 greater thana width in the second direction D2. Each of the first and secondmagnetic layers FL1 and FL2 may have a length in the first direction D1greater than the thickness in the second direction D2 and the the widthin the third direction D3.

The conductive layer CL may be disposed between the first and secondmagnetic layers FL1 and FL2. The conductive layer CL may be interposedbetween the top surface of the first magnetic layer FL1 and the bottomsurface of the second magnetic layer FL2. The conductive layer CL mayhave a uniform thickness in the second direction D2 and may extendparallel to the first and second magnetic layers FL1 and FL2. Thethickness in the second direction D2 of the conductive layer CL may beless than those of the first and second magnetic layers FL1 and FL2. Theconductive layer CL may cover the top surface of the first magneticlayer FL1 and the bottom surface of the second magnetic layer FL2. Inthis case, the conductive layer CL may be in direct contact with thefirst and second magnetic layers FL1 and FL2.

FIG. 2 illustrates a cross-sectional view showing a magnetic memorydevice according to some example embodiments of the present inventiveconcepts. FIG. 3 illustrates an exploded perspective view roughlyshowing a magnetic memory device according to some example embodimentsof the present inventive concepts.

Referring to FIGS. 2 and 3, the magnetic domains D of the first andsecond magnetic layers FL1 and FL2 may have their perpendicular magneticanisotropy (PMA) set. For example, the magnetic domains D of the firstand second magnetic layers FL1 and FL2 may have their magnetizationdirections set to extend parallel to the second direction D2. Themagnetic domains D of the first and second magnetic layers FL1 and FL2may have a synthetic anti-ferromagnetic structure (SAF). The magneticdomains D of the first and second magnetic layers FL1 and FL2 may havean antiferromagnetic coupling property caused by aRuderman-Kittel-Kasuya-Yosida (RKKY) interaction.

For example, the magnetic domains D of the first magnetic layer FL1 facein the second direction D2 toward the magnetic domains D of the secondmagnetic layer FL2. The magnetic domain D of the first magnetic layerFL1 may have a magnetization direction set antiparallel to that of themagnetic domain D of the second magnetic layer FL2. The magnetic domainsD of the first and second magnetic layers FL1 and FL2 are adjacent toeach other in the second direction D2. In this case, the magneticdirection of the magnetic domain D of the first magnetic layer FL1 maybe opposite to that of the magnetic domain D of the second magneticlayer FL2, as shown by FIG. 2. Therefore, the magnetic track maydecrease in saturation magnetization, and may require a reduced currentfor the motion of the magnetic domain wall DW.

Each of the first and second magnetic layers FL1 and FL2 may include oneor more of cobalt (Co), iron (Fe), and nickel (Ni). Each of the firstand second magnetic layers FL1 and FL2 may further include at least oneof non-magnetic materials, such as boron (B), zinc (Zn), aluminum (Al),titanium (Ti), ruthenium (Ru), tantalum (Ta), silicon (Si), silver (Ag),gold (Au), copper (Cu), carbon (C), and nitrogen (N). For example, eachof the first and second magnetic layers FL1 and FL2 may include one ormore of FePt, FePd, CoCr, CoCu, CoPt, CoTb, CoCrPt, CoFeTb, CoFeGd,CoNi, and CoNiFe. The first and second magnetic layers FL1 and FL2 mayinclude the same material.

The magnetic domain walls DW of the first magnetic layer FL1 may face inthe second direction D2 toward the magnetic domain walls DW of thesecond magnetic layer FL2. The magnetic domain walls DW of the first andsecond magnetic layers FL1 and FL2 may each have a net magnetizationparallel to the first direction D1. A magnetization direction of themagnetic domain wall DW will be further discussed in detail below withreference to FIG. 4.

The first magnetic layer FL1 may have chirality (e.g., a mirror-imagegeometric property) opposite to that of the second magnetic layer FL2.For example, the first magnetic layer FL1 may have a magnetic momentoriented in a first rotational direction clockwise (CW) along the firstdirection D1, and the second magnetic layer FL2 may have a magneticmoment oriented in a second rotational direction counter clockwise (CCW)along the first direction D1, which first and second rotationaldirections CW and CCW are different from each other. The first andsecond rotational directions CW and CCW may be opposite to each other.The first rotational direction CW and the second rotational directionCCW may respectively be a clockwise direction and a counterclockwisedirection that have their rotation axes parallel to the third directionD3.

The conductive layer CL may be interposed between the first magneticlayer FL1 and the second magnetic layer FL2. The conductive layer CL mayhave a bottom surface in contact with the top surface of the firstmagnetic layer FL1 and a top surface in contact with the bottom surfaceof the second magnetic layer FL2. The conductive layer CL may have athickness in the second direction D2 that is less than the thicknessesin the second direction D2 of the first and second magnetic layers FL1and FL2.

A spin orbit coupling may be created by a current flowing through theconductive layer CL. For example, the conductive layer CL may include amaterial in which a spin Hall effect or a Rashba effect may be producedby a current flowing in a direction parallel to the first direction Dl.The conductive layer CL may include a heavy metal whose atomic number is30 or higher. The conductive layer CL may include, for example, iridium(Ir), ruthenium (Ru), tantalum (Ta), platinum (Pt), palladium (Pd),bismuth (Bi), titanium (Ti), or tungsten (W).

A current flowing in a direction parallel to the first direction D1through the conductive layer CL may drive the magnetic domain walls DWto move in the first direction D1 or in a direction opposite to thefirst direction D1. A motion direction SDWM of the magnetic domain wallDW may be determined by multiplication of a sign SST of spin torquecoefficient and a sign SJ of applied current. The sign SST of spintorque coefficient may be given by multiplication of a sign SSOT of spinorbit torque and a sign SDMI of Dzyaloshinskii-Moriya Interaction (DMI)constant. As a result, the motion direction SDWM of the magnetic domainwall DW may be determined by Equation 1 below.

S_(DWM)=S_(ST)×S_(J)=S_(SOT)×S_(DMI)×S_(J)   [Equation 1]

When a current flows in a direction parallel to the first direction D1through the conductive layer CL, a direction of spin orbit torque SOT1at an interface between the first magnetic layer FL1 and the conductivelayer CL may be opposite to that of spin orbit torque SOT2 at aninterface between the second magnetic layer FL2 and the conductive layerCL. Because the first and second magnetic layers FL1 and FL2 have theirchiralities opposite to each other as discussed above, when a currentflows in a direction parallel to the first direction D1 through theconductive layer CL, the motion direction of the magnetic domain wall DWof the first magnetic layer FL1 may become the same as that of themagnetic domain wall DW of the second magnetic layer FL2.

A DMI constant at an interface between the first magnetic layer FL1 andthe conductive layer CL may be greater than or equal to four times ormore an exchange coupling constant between the first magnetic layer FL1and the second magnetic layer FL2. A DMI constant at an interfacebetween the second magnetic layer FL2 and the conductive layer CL maybegreater than or equal to four times or more an exchange couplingconstant between the first magnetic layer FL1 and the second magneticlayer FL2. The DMI constant at an interface between the first magneticlayer FL1 and the conductive layer CL and at an interface between thesecond magnetic layer FL2 and the conductive layer CL may be less than100 times the exchange coupling constant between the first magneticlayer FL1 and the second magnetic layer FL2.

FIG. 4 illustrates an enlarged cross-sectional view showing section AAof FIG. 3. Referring to FIG. 4, the first magnetic layer FL1 may includea first magnetic domain Da and a second magnetic domain Db that havedifferent magnetization directions from each other. The first and secondmagnetic domains Da and Db may be spaced apart from each other in thefirst direction D1. The first magnetic domain Da may have amagnetization direction aligned in the second direction D2. The secondmagnetic domain Db may have a magnetization direction aligned in adirection opposite to the second direction D2. The first and secondmagnetic domains Da and Db may have therebetween a first region DWahaving a magnetization direction that is changed along the firstdirection D1. The first region DWa may have a magnetization directionthat is gradually oriented in the counterclockwise direction CCW alongthe first direction D1.

The second magnetic layer FL2 may include a third magnetic domain Dc anda fourth magnetic domain Dd that have different magnetization directionsfrom each other. The third and fourth magnetic domains Dc and Dd may bespaced apart from each other in the first direction D1. The thirdmagnetic domain Dcmay be adjacent to the first magnetic domain Da in thesecond direction. The fourth magnetic domain Dd may be adjacent to thesecond magnetic domain Db in the second direction. The first and secondmagnetic layers FL1 and FL2 are combined with each other in a syntheticanti- ferromagnetic coupling manner, the third magnetic domain Dc mayhave a magnetization direction antiparallel to that of the firstmagnetic domain Da. The fourth magnetic domain Dd may have amagnetization direction antiparallel to that of the second magneticdomain Db. The third and fourth magnetic domains Dc an Dd may havetherebetween a second region DWb having a magnetization direction thatis changed along the first direction D1. The magnetization direction ofthe second region DWb may be gradually oriented in the clockwisedirection CW along the first direction D1.

Each of the first and second regions DWa and DWb may be an area which isformed between two zones having different magnetization directions andwhose magnetization direction is gradually changed. Each of the firstand second regions DWa and DWb may be a magnetic domain wall. Each ofthe first and second regions DWa and DWb may have a net magnetization inthe first direction D1. For example, the first and second regions DWaand DWb may have their net magnetizations in the same direction. In thissense, a sum of magnetization vectors in the first region DWa may be thesame as the first direction D1. A sum of magnetization vectors in thesecond region DWb may be the same as the first direction D1.

FIGS. 5A to 7B illustrate simulation graphs showing a magnetizationdirection based on DMI and Jex of a magnetic track according to someexample embodiments of the present inventive concepts. A magnetic trackused in simulation includes a first magnetic layer, a conductive layer,and a second magnetic layer that are sequentially stacked. The magnetictrack has a length of 200 nm in a first direction and a width of 14 nmin a second direction. The first magnetic layer, the conductive layer,and the second magnetic layer have respective thicknesses of 1 nm, 0.5nm, and 1 nm in a third direction.

A Dzyaloshinskii-Moriya interaction (DMI) may be a phenomenon occurringin a ferromagnetic material with broken inversion symmetry and strongspin-orbit coupling is strong. For example, the DMI may be a phenomenonwherein a spin present at an interface of a magnetic layer is coupled toan orbit of an electron present in a non- magnetic layer when themagnetic layer is in contact with an interface of the non- magneticlayer. When the DIM is present, adjacent spin directions may be keptperpendicular. The DMI may produce a spin structure oriented in aspatially specific direction. In FIGS. 5A to 7B below, the DMI indicatesa DMI constant at an interface either between the first magnetic layerand the conductive layer or between the second magnetic layer and theconductive layer. The symbol Jex denotes an exchange coupling constantbetween the first magnetic layer and the second magnetic layer.

In FIG. 5A, based on DMI and Jex, a magnetization direction of the firstmagnetic layer was simulated along a first direction (e.g., longitudinaldirection). In FIG. 5B, based on DMI and Jex, a magnetization directionof the second magnetic layer was simulated along the first direction(e.g., longitudinal direction). In FIG. 6A, based on DMI and Jex, amagnetization direction of the first magnetic layer was simulated alonga second direction (e.g.., width direction). In FIG. 6B, based on DMIand Jex, a magnetization direction of the second magnetic layer wassimulated along the second direction (e.g.., width direction). In FIG.7A, based on DMI and Jex, a magnetization direction of the firstmagnetic layer was simulated along a third direction (e.g., thicknessdirection). In FIG. 7B, based on DMI and Jex, a magnetization directionof the second magnetic layer was simulated along the third direction(e.g., thickness direction).

Referring to FIGS. 5A to 7B, it may be found that there is a tendency ofthe magnetization direction in accordance with a ratio of DMI to Jex.For example, as shown in the graph, it may be ascertained that a regionwhere an absolute value of DMI/Jex is in a range of greater than 4, ofgreater than 0.5 and greater than 4, or of less than 0.5 has a similarmagnetization direction. The result of simulation may be stated in Table1 below.

TABLE 1 |DMI/Jex| FL1 FL2 FL1 FL2 |DMI/Jex| > 4 Neel Neel CW CCW 4 >|DMI/Jex| > 0.5 Bloch Bloch — — |DMI/Jex| < 0.5 Neel Neel CCW CCW

Referring back to FIGS. 5A to 7B and Table 1, when the DMI constant atan interface between the first magnetic layer and at an interfacebetween the conductive layer and between the second magnetic layer andthe conductive layer is four times or more the exchange couplingconstant between the first and second magnetic layers, it may beinterpreted that the first and second magnetic layers have their Neelmagnetic domain wall. In addition, when the DMI constant at an interfacebetween the first magnetic layer and at an interface between theconductive layer and between the second magnetic layer and theconductive layer is four times or more the exchange coupling constantbetween the first and second magnetic layers, it may be concluded thatthe first and second magnetic layers have their chiralities opposite toeach other.

Accordingly, when the DMI constant at an interface between the firstmagnetic layer and at an interface between the conductive layer andbetween the second magnetic layer and the conductive layer is four timesor more the exchange coupling constant between the first and secondmagnetic layers, it may be understood that the magnetic domain walls maymove due to spin orbit torque, and that the efficiency of the magneticdomain wall motion may be increased.

FIG. 8 illustrates a cross-sectional view showing a magnetic memorydevice according to some example embodiments of the present inventiveconcepts. Referring to FIG. 8, a magnetic track may include first tofourth magnetic layers FL1 to FL4. A first conductive layer CL1 may bedisposed between the first magnetic layer FL1 and the second magneticlayer FL2. A second conductive layer CL2 may be disposed between thesecond magnetic layer FL2 and the third magnetic layer FL3. A thirdconductive layer CL3 may be disposed between the third magnetic layerFL3 and the fourth magnetic layer FL4. The first and third conductivelayers CL1 and CL3 may include the same material. The second conductivelayer CL2 may include a material whose DMI sign is different from thatof the material included in the first and third conductive layers CL1and CL3. For example, the first and third conductive layers CL1 and CL3may include one of tantalum (Ta) and platinum (Pt), and the secondconductive layer CL2 may include the other of tantalum (Ta) and platinum(Pt).

Each of the first to fourth magnetic layers FL1 to FL4 may havechirality opposite to that of other magnetic layer adjacent thereto. Forexample, when the second magnetic layer FL2 has a magnetizationdirection oriented in the clockwise direction CW along the firstdirection D1, the first magnetic layer FL1 and the third magnetic layerFL3 may have their magnetization directions oriented in thecounterclockwise direction CCW along the first direction D1. Because thefourth magnetic layer FL4 is adjacent to the third magnetic layer FL3,the fourth magnetic layer FL4 may have a magnetization directionoriented in the clockwise direction CW along the first direction D1.

FIGS. 9 to 13 illustrate cross-sectional views showing a magnetic memorydevice according to some example embodiments of the present inventiveconcepts. A description of duplicate components may be omitted in theinterest of brevity. Referring to FIG. 9, a magnetic memory deviceaccording to some embodiments of the present inventive concepts may be afour-terminal device including four electrodes. A lower conductive layerHM may be disposed on a bottom surface of the magnetic track thatincludes the first magnetic layer FL1, the conductive layer CL, and thesecond magnetic layer FL2 that are sequentially stacked. The lowerconductive layer HM may include a heavy metal whose atomic number is 30or higher. The lower conductive layer HM may include, for example,iridium (Ir), ruthenium (Ru), tantalum (Ta), platinum (Pt), palladium(Pd), bismuth (Bi), titanium (Ti), or tungsten (W). A dielectric layerLD may cover a bottom surface of the lower conductive layer HM.

A magnetic pattern PL may be disposed on a top surface of the magnetictrack. The magnetic pattern PL may be a reference layer having amagnetization direction that is fixed in one direction. The magneticpattern PL may have a magnetization direction parallel to that of themagnetic domain D of the second magnetic layer FL2. The magnetizationdirection of the magnetic pattern PL may be opposite that of one of themagnetic domains D included in the second magnetic layer FL2, which oneof the magnetic domains D is most adjacent to the magnetic pattern PL.

A tunnel barrier pattern SP may be disposed between the second magneticlayer FL2 and the magnetic pattern PL. The tunnel barrier pattern SP mayinclude one or more of a magnesium (Mg) oxide layer, a titanium (Ti)oxide layer, an aluminum (Al) oxide layer, a magnesium-zinc (Mg-Zn)oxide layer, and a magnesium-boron (Mg-B) oxide layer.

A first electrode EU may be disposed on one side of the magnetic track.The first electrode EL1 may cover a lateral surface of the lowerconductive layer HM, a lateral surface of the first magnetic layer FL1,a lateral surface of the conductive layer CL, and a lateral surface ofthe second magnetic layer FL2. The magnetic track may have a secondelectrode EL2 on its other side that faces in the first direction D1toward the first electrode EL1 . The second electrode EL2 may coverother lateral surface of the lower conductive layer HM, other lateralsurface of the first magnetic layer FL1, other lateral surface of theconductive layer CL, and other lateral surface of the second magneticlayer FL2.

A third electrode EL3 may be disposed on the magnetic pattern PL. Thethird electrode EL3 may cover a top surface of the magnetic pattern PL.A fourth electrode EL4 may be disposed on a bottom surface of the firstmagnetic layer FL1. The fourth electrode EL4 may vertically overlap thethird electrode EL3.

First, second, third, and fourth transistors TR1, TR2, TR3, and TR4 maybe respectively connected to the first, second, third, and fourthelectrodes EL1, EL2, EL3, and EL4. The first and second transistors TR1and TR2 may be drive transistors that move the magnetic domain wall DW.The first and second transistors TR1 and TR2 may supply the lowerconductive layer HM and the conductive layer CL with current flowing inthe first direction D1. The lower conductive layer HM and the conductivelayer CL that are supplied with the current flowing in the firstdirection D1 may utilize spin-orbit coupling to advantageously move themagnetic domain wall DW. The third and fourth transistors TR3 and TR4may write or read magnetization directions into or from the magneticdomains D of the magnetic track.

Referring to FIG. 10, the lower conductive layer HM may be omitted.Thus, the bottom surface of the first magnetic layer FL1 may directlycontact the dielectric layer LD. Referring to FIG. 11, a first tunnelbarrier pattern SP1 and the first magnetic pattern PL1 may besequentially stacked on a top surface of the second magnetic layer FL2.A second tunnel barrier pattern SP2 and the second magnetic pattern PL2may be sequentially stacked on the bottom surface of the first magneticlayer FL1. The first and second magnetic patterns PL1 and PL2 mayvertically overlap each other. The first and second magnetic patternsPL1 and PL2 may be reference layers that have magnetization directionsfixed in one direction. The first and second magnetic patterns PL1 andPL2 may have their magnetization directions in the second direction D2.

The third electrode EL3 may be disposed on a top surface of the firstmagnetic pattern PL1, and the fourth electrode EL4 may be disposed on abottom surface of the second magnetic pattern PL2. The third and fourthtransistors TR3 and TR4 may be respectively disposed on the third andfourth electrodes EL3 and EL4.

Referring to FIGS. 12 and 13, a magnetic memory device according to someembodiments of the present inventive concepts may be a three-terminaldevice. Referring to FIG. 12, a dielectric layer LD may completely covera bottom surface of the first magnetic layer FL1. Referring to FIG. 13,the magnetic track may include first to fourth magnetic layers FL1 toFL4 that are sequentially stacked in the second direction D2. A firstconductive layer CL1 may be disposed between the first magnetic layerFL1 and the second magnetic layer FL2. A second conductive layer CL2 maybe disposed between the second magnetic layer FL2 and the third magneticlayer FL3. A third magnetic layer CL3 may be disposed between the thirdmagnetic layer FL3 and the fourth magnetic layer FL4. The first andthird conductive layers CL1 and CL3 may include the same material. Thesecond conductive layer CL2 may include a material whose DMI sign isdifferent from that of the material of the first and third conductivelayers CL1 and CL3.

A first electrode EL1 may be disposed covering lateral surfaces of thefirst to fourth magnetic layers FL1 to FL4 and of the first to thirdconductive layers CL1 to CL3. A second electrode EL2 may be disposedcovering other lateral surfaces of the first to fourth magnetic layersFL1 to FL4 and of the first to third conductive layers CL1 to CL3.First, second, and third transistors TR1, TR2, and TR3 may berespectively connected to first, second, and third electrodes EL1, EL2,and EL3. The first and second transistors TR1 and TR2 may supply thefirst to third conductive layers CL1 to CL3 with current flowing in adirection parallel to the first direction D1. The current applied to thefirst to third conductive layers EL1, EL2, and EL3 may create spin orbittorque to move the magnetic domain wall DW of the magnetic track. Inthis case, the magnetic domain walls DW of the first to fourth magneticlayers FL1 to FL4 may all move in the same direction.

According to the present inventive concepts, a magnetic track of amagnetic memory device may have a synthetic anti-ferromagnetic structureand may include a plurality of magnetic layers having chiralitiesopposite to each other. Accordingly, it may be possible to easily movethe magnetic domain walls and to reduce the magnitude of currentrequired for the motion of the magnetic domain walls.

Although some example embodiments of the present inventive concepts havebeen discussed with reference to accompanying figures, it will beunderstood that various changes in form and details may be made thereinwithout departing from the spirit and scope of the present inventiveconcepts. It therefore will be understood that the embodiments describedabove are just illustrative but not limitative in all aspects.

What is claimed is:
 1. A magnetic memory device, comprising: a firstmagnetic layer extending in a first direction, the first magnetic layerincluding a first region having magnetic moments oriented in a firstrotational direction along the first direction; a second magnetic layeron the first magnetic layer and extending in the first direction, thesecond magnetic layer including a second region having magnetic momentsoriented in a second rotational direction along the first direction, thesecond rotational direction is opposite to the first rotationaldirection; a conductive layer, which extends in the first directionbetween the first magnetic layer and the second magnetic layer and isconfigured to support current flow in the first direction between thefirst and second magnetic layers, from a first end of the conductivelayer to a second end of the conductive layer; an upper magnetic layeron the second magnetic layer, the upper magnetic layer having amagnetization direction fixed in one direction; and a tunnel barrierpattern between the upper magnetic layer and the second magnetic layer.2. The magnetic memory device of claim 1, further comprising: a firstelectrode on the first end of the conductive layer; and a secondelectrode on the second end of the conductive layer, wherein the firstend is opposite to the second end in the first direction.
 3. Themagnetic memory device of claim 2, further comprising: a third electrodeon the upper magnetic layer, wherein the upper magnetic layer is betweenthe tunnel barrier pattern and the third electrode.
 4. The magneticmemory device of claim 3, further comprising: a fourth electrode on abottom surface of the first magnetic layer, the fourth electrodevertically overlapping the third electrode.
 5. The magnetic memorydevice of claim 1, the conductive layer is a first conductive layer; thedevice further comprising a second conductive layer, a third magneticlayer, a third conductive layer, and a fourth magnetic layer that aresequentially stacked on the second magnetic layer and extend in thefirst direction, wherein the upper magnetic layer on the fourth magneticlayer, and the tunnel barrier pattern between the upper magnetic layerand the fourth magnetic layer, and wherein the third magnetic layerincluding a third region having magnetic moments oriented in the firstrotational direction along the first direction, and the fourth magneticlayer including a fourth region having magnetic moments oriented in thesecond rotational direction along the first direction.
 6. The magneticmemory device of claim 5, wherein the second conductive layer includes amaterial different from materials of the first and third conductivelayers.
 7. The magnetic memory device of claim 1, wherein aDzyaloshinskii-Moriya Interaction constant at an interface between thefirst magnetic layer and the conductive layer and at an interfacebetween the second magnetic layer and the conductive layer is at leastfour times a value of an exchange coupling constant between the firstmagnetic layer and the second magnetic layer.
 8. The magnetic memorydevice of claim 1, wherein a net magnetization of each of the first andsecond regions becomes oriented parallel to the first direction inresponse to the current flow in the first direction within theconductive layer.
 9. The magnetic memory device of claim 1, wherein thefirst and second regions face each other in a second directionorthogonal to the first direction; and wherein a net magnetization ofthe first region and a net magnetization of the second region areoriented in a same direction.
 10. The magnetic memory device of claim 1,wherein the conductive layer has a thickness less than thicknesses ofthe first and second magnetic layers.
 11. The magnetic memory device ofclaim 1, wherein the conductive layer is supplied with current in thefirst direction within the conductive layer to create spin orbit torqueat an interface between the first magnetic layer and the conductivelayer and at an interface between the second magnetic layer and theconductive layer; and wherein the current flows parallel to theinterface between the first magnetic layer and the conductive layer andparallel to the interface between the second magnetic layer and theconductive layer.
 12. The magnetic memory device of claim 11, whereinthe spin orbit torque at the interface between the first magnetic layerand the conductive layer has a direction opposite to a direction of thespin orbit torque at the interface between the second magnetic layer andthe conductive layer.
 13. The magnetic memory device of claim 1, whereinthe first rotational direction is a clockwise rotational directionaround a rotational axis, which extends parallel to a width direction ofthe conductive layer, and the second rotational direction is acounterclockwise rotational direction around the rotational axis.
 14. Amagnetic memory device, comprising: a first magnetic layer extending ina first direction, the first magnetic layer including a first regionhaving magnetic moments oriented in a first rotational direction alongthe first direction; a second magnetic layer on the first magnetic layerand extending in the first direction, the second magnetic layerincluding a second region having magnetic moments oriented in a secondrotational direction along the first direction, the second rotationaldirection is opposite to the first rotational direction; a conductivelayer, which extends in the first direction between the first magneticlayer and the second magnetic layer and is configured to support currentflow in the first direction between the first and second magneticlayers; and a read/write element on the second magnetic layer, wherein aDzyaloshinskii-Moriya Interaction constant at an interface between thefirst magnetic layer and the conductive layer and at an interfacebetween the second magnetic layer and the conductive layer is at leastfour times a value of an exchange coupling constant between the firstmagnetic layer and the second magnetic layer.
 15. The magnetic memorydevice of claim 14, wherein the read/write element includes a GMR sensoror a TMR sensor.
 16. The magnetic memory device of claim 14, furthercomprising: a first electrode on a first lateral surface of theconductive layer; and a second electrode on a second lateral surface ofthe conductive layer, the second lateral surface opposite to the firstlateral surface in the first direction.
 17. The magnetic memory deviceof claim 14, the conductive layer is a first conductive layer; thedevice further comprising a second conductive layer, a third magneticlayer, a third conductive layer, and a fourth magnetic layer that aresequentially stacked on the second magnetic layer and extend in thefirst direction, wherein the read/write element on the fourth magneticlayer, and wherein the third magnetic layer including a third regionhaving magnetic moments oriented in the first rotational direction alongthe first direction, and the fourth magnetic layer including a fourthregion having magnetic moments oriented in the second rotationaldirection along the first direction.
 18. The magnetic memory device ofclaim 17, wherein the second conductive layer includes a materialdifferent from materials of the first and third conductive layers. 19.The magnetic memory device of claim 14, wherein the conductive layer issupplied with current in the first direction within the conductive layerto create spin orbit torque at an interface between the first magneticlayer and the conductive layer and at an interface between the secondmagnetic layer and the conductive layer; and wherein the current flowsparallel to the interface between the first magnetic layer and theconductive layer and parallel to the interface between the secondmagnetic layer and the conductive layer.
 20. The magnetic memory deviceof claim 19, wherein the spin orbit torque at the interface between thefirst magnetic layer and the conductive layer has a direction oppositeto a direction of the spin orbit torque at the interface between thesecond magnetic layer and the conductive layer.